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may 2011 doc id 018870 rev 1 1/14 14 STL13NM60N n-channel 600 v, 0.320 , 10 a powerflat? (8x8) hv mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this device is a n-channel power mosfets made using the second generation of mdmesh? technology. this revolutionary transistor associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d STL13NM60N 650 v < 0.385 10 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0ower&,!4?x (6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging STL13NM60N 13nm60n powerflat? (8x8) hv tape and reel www.st.com
contents STL13NM60N 2/14 doc id 018870 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STL13NM60N electrical ratings doc id 018870 rev 1 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case drain current (continuous) at t c = 25 c 10 a i d (1) drain current (continuous) at t c = 100 c 6.5 a i d (2) 2. pulse width limited by safe operating area drain current (continuous) at t c = 25 c 1.9 a i d (2) drain current (continuous) at t c = 100 c 1.1 a i dm (2),(3) drain current (pulsed) 7.6 a p tot (3) 3. when mounted on fr-4 board of inch2, 2oz cu total dissipation at t c = 25 c (steady state) 3 w p tot (1) total dissipation at t c = 25 c (steady state) 90 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 3a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 93 mj dv/dt (4) 4. i sd 10 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.38 c/w r thj-amb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-amb max 45 c/w
electrical characteristics STL13NM60N 4/14 doc id 018870 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5 a 0.320 0.385 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 790 60 3.6 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0 to 480 v, v gs = 0 - 135 - pf r g intrinsic gate resistance f = 1 mhz open drain - 4.7 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 10 a, v gs = 10 v (see figure 14 ) - 30 4 15 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 10 a, r g = 4.7 , v gs = 10 v (see figure 18 ) - 13 25 85 50 - ns ns ns ns
STL13NM60N electrical characteristics doc id 018870 rev 1 5/14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 10 40 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s v dd = 100 v (see figure 15 ) - 340 2 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 15 ) - 290 190 17 ns c a
electrical characteristics STL13NM60N 6/14 doc id 018870 rev 1 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ms s ms 4j?# 4c?# 3ingle pulse ms !-v 10 -5 10 -4 10 - 3 10 -2 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth powerflat 8 x 8 hv ) $ 6 $3 6 ! 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 66 $3 !-v )$m! "6 $33 4 * ?# norm !-v r d s (on) 0. 3 15 0. 3 10 0. 3 05 0. 3 00 0 i d (a) ( ) 0. 3 20 0. 3 25 0. 33 0 0. 33 5 v g s =10v 4 8 2 6 10 1 3 5 7 9 am09779v1
STL13NM60N electrical characteristics doc id 018870 rev 1 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 !-v # 6 $3 6 p& #iss #oss #rss !-v )?! $ 6 '3th 4 * ?# norm !-v 2 $3on 4 * ?# norm 6 6 )! $ '3 !-v 6 3$ ) 3$ ! 6 4 * ?# 4 * ?# 4 * ?# !-v
test circuits STL13NM60N 8/14 doc id 018870 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL13NM60N package mechanical data doc id 018870 rev 1 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL13NM60N 10/14 doc id 018870 rev 1 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.02 0.05 b 0.95 1.00 1.05 c0.10 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60
STL13NM60N package mechanical data doc id 018870 rev 1 11/14 figure 19. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e e b a e2 d2 l 0.40 a1 am05542v1
package mechanical data STL13NM60N 12/14 doc id 018870 rev 1 figure 20. powerflat? 8x8 hv recommended footprint 7. 3 0 4.40 2.00 0.60 1.05 am0554 3 v1
STL13NM60N revision history doc id 018870 rev 1 13/14 5 revision history table 9. document revision history date revision changes 23-may-2011 1 first release.
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